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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1383 DESCRIPTION *With TO-220 package *Complement to type 2SC3514 *High transition frequency APPLICATIONS *Designed for use in audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -0.1 1.5 W UNIT V V V A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-50mA; IB=-5mA IC=-50mA; IB=-5mA VCB=-180V; IE=0 VEB=-3V; IC=0 IC=-1mA ; VCE=-5V IC=-10mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-20mA ; VCE=-10V 90 100 4.5 180 MIN -180 TYP. 2SA1383 MAX UNIT V -0.5 -1.5 -1.0 -1.0 V V A A 320 pF MHz hFE-2 Classifications Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1383 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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